Quantum Nano-Electronics & Nano-Photonics


Peer Reviewed Journal Papers (52 including 18 first author papers and 7 invited paper)

1.S. Saito, Z. Li, H. Yoshimoto, Y. Sasago, H. Arimoto, I. Tomita, F. Liu, M. K. Husain, K. Tani, D. Hisamoto, Y. Tsuchiya, H. N. Rutt, and S. Kurihara, “Quantum dipole system: Topological phase transition in a silicon channel under high electric fields”, Nature (Submitted).

2.Z. Li, M. K. Husain, H. Yoshimoto, K. Tani. Y. Sasago, D. Hisamoto, J. Fletcher, M. Kataoka, Y. Tsuchiya, and S. Saito, “Single Carrier Trapping and De-trapping in Scaled Silicon Complementary Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures”, Semicond. Sci. Technol. (Accepted, 2017).

3.A. Prasmusinto, M. Sotto, A. Z. Al-Attili, K. Debnath, and S. Saito, “Theoretical Designs for Novel Photonic Crystal Nanocavities with Si (111) Interfaces”, Photonics and Nanostructures - Fundamentals and Applications (PNFA), (accepted, 2017).

4.K. Debnath, T. D. Bucio, A. Al-Attili, A. Z. Khokhar, S. Saito, and F. Y. Gardes, “Photonic crystal waveguides on silicon rich nitride platform”, Opt. Exp. 25, 3214—3221 (2017).

5.K. Debnath, A. Z. Khokhar, S. A. Boden, H. Arimoto, S. Z. Oo, H. M. H. Chong, G. T. Reed, and S. Saito, “Low-Loss Slot Waveguides with Silicon (111) Surfaces Realized Using Anisotropic Wet Etching”, Front. Mat. 3, 51 (2016).

6.S. Saito, A. Z. Al-Attili, K. Oda, and Y. Ishikawa, “Towards monolithic integration of germanium light sources on silicon chips”, Semicond. Sci. Technol. 31, 043002 (2016) [Invited review].

7.A. Z. Al-Attili, S. Kako, M. K. Husain, F. Y. Gardes, S. Iwamoto, Y. Arakawa, and S. Saito, “Tensile strain engineering of germanium micro-disks on free-standing SiO2 beams”, Jpn. J. Appl. Phys. 55, 04EH02 (2016).

8.K. Debnath, H. Arimoto, M. K. Husain, A. Prasmusinto, A. Z. Al-Attili, R. Petra, H. M. Chong, G. T. Reed, and S. Saito, “Low-Loss Silicon Waveguides and Grating Couplers Fabricated Using Anisotropic Wet Etching Technique”, Front. Mat. 3, 10 (2016).

9.A. Z. Al-Attili, S. Kako, M. K. Husain, F. Y. Gardes, N. Higashitarumizu, S. Iwamoto, Y. Arakawa, Y. Ishikawa, H. Arimoto, K. Oda, T. Ido, and S. Saito, “Whispering Gallery Mode Resonances from Ge Micro-Disks on Suspended Beams”, Frontiers in Materials 2, 43 (2015).

10.A. Z. Al-Attili, S. Kako, M. K. Husain, F. Y. Gardes, H. Arimoto, N. Higashitarumizu, S. Iwamoto, Y. Arakawa, and S. Saito, “Spin-on Doping of Gremanium-on-Insulator Wafers for Monolithic Light Sources on Silicon”, Jpn. J. Appl. Phys. 54, 052101 (2015).

11.T. Kawamura, H. Uchiyama, S. Saito, H. Wakana, T. Mine, and M. Hatano, “Analysis of subthreshold slope of fully depleted amorphous In-Ga-Zn-O thin-film transistors”, Appl. Phys. Lett. 106, 013504 (2015).

12.S. Saito and A. S. Holmes, Editorial, Microelectronic Engineering 119, vii (2014).

13.S. Saito, F. Y. Gardes, A. Z. Al-Attili, K. Tani, K. Oda, Y. Suwa, T. Ido, Y. Ishikawa, S. Kako, S. Iwamoto, and Y. Arakawa, “Group IV Light Sources to Enable the Convergence of Photonics and Electronics”, Frontiers in Materials 1, 15, (2014) [Invited review in the inaugural issue].

14.Y. Ishikawa and S. Saito, “Ge-on-Si photonic devices for photonic-electronic integration on a Si platform”, IEICE Electronics Express (ELEX), 11, pp. 1-17 (2014) [Invited review].

15.K. Oda, K. Tani, S. Saito, and T. Ido, “Improvement of crystallinity by post-annealing and regrowth of Ge layers on Si substrates”, Thin Solid Films 550, pp. 509-514 (2014).

16.K. Oda, T. Okumura, K. Tani, S. Saito, T. Ido, “Improvement of photoluminescence from Ge layer with patterned Si3N4 stressors”, Thin Solid Films 557, pp. 355-362 (2014).

17.K. Oda, K. Tani, S. Saito, and T. Ido, “Monolithic Ge Optical Emitters for Photonic-Electronic Integration”, ECS Trans. 54, pp. 283-289 (2013) [invited review].

18.K. Oda, K. Tani, S. Saito, and T. Ido, “Ge Optical Emitters Fabricated by Ge Condensation and Epitaxial Growth”, ECS Trans. 50, pp. 277-286 (2012) [invited review].

19.F. M. Alkhalil, J. I. Perez-Barraza, M. K. Husain, Y. P. Lin, N. Lambert, H. M. H. Chong, Y. Tsuchiya, D. A. Williams, A. J. Ferguson, S. Saito, and H. Mizuta, “Realization of Al tri-gate single electron turnstile co-integrated with a close proximity electrometer SET”, Microelectron. Eng. 111, 64 (2013).

20.S. Saito, “Silicon and Germanium Quantum-Well Light-Emitting Devices”, Japanese Applied Physics (Ohyoubuturi) 82, 55 (2013) [invited review].

21.S. Saito, K. Oda, K. Tani, M. Takahashi, E. Nomoto, T. Okumura, Y. Suwa, Y. Lee, M. Sagawa, T. Sugawara, and T. Ido, “Si/Ge Quantum Well Light-Emitting Diode for Monolithic Integration in Si Photonics Chips”, ECS Trans. 45, pp. 103-112 (2012) [invited review].

22.K. Tani, K. Oda, Y. Lee, T. Mine, S. Saito, T. Sugawara, and T. Ido, “Light Detection and Emission in Germanium-On-Insulator Diodes", Jpn. J. Appl. Phys. 51, 04DG09 (2012).

23.K. Oda, K. Tani, T. Okumura, S. Saito, and T. Ido, “Improving optical properties of Ge layers fabricated by epitaxial growth combined with Ge condensation", Jpn. J. Appl. Phys. 51, 04DG10 (2012).

24.S. Saito, K. Oda, T. Takahama, K. Tani, and T. Mine, “Germanium fin light-emitting diode”, Appl. Phys. Lett. 99, 241105 (2011) [Cited 9 times].

25.S. Saito, T. Takahama, K. Tani, M. Takahashi, T. Mine, Y. Suwa, and D. Hisamoto, “Stimulated emission of near-infrared radiation in silicon fin light-emitting diode”, Appl. Phys. Lett. 98, 261104 (2011) [cited 9 times].

26.Y. Sakurai, J. Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara, and S. Miyazaki, “Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots”, Jpn. J. Appl. Phys. 49, 014001 (2010).

27.S. Saito, Y. Suwa, H. Arimoto, N. Sakuma, D. Hisamoto, H. Uchiyama, J. Yamamoto, T. Sakamizu, T. Mine, S. Kimura, T. Sugawara, and M. Aoki, "Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well", Appl. Phys. Lett. 95, 241101 (2009) [Cited 8 times].

28.Y. Suwa and S. Saito, ”Intrinsic optical gain of ultrathin silicon quantum wells from first-principles calculations”, Phys. Rev. B 79, 233308 (2009) [Cited 18 times].

29.T. Nagami, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, H. Mizuta, and S. Oda, “Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory”, Jpn. J. Appl. Phys. 48, 114502 (2009) [cited 18 times].

30.A. Tanaka, Y. Tsuchiya, K. Usami, S. Saito, T. Arai, H. Mizuta, and S. Oda, “Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir–Blodgett Technique”, Jpn. J. Appl. Phys. 47, 3731 (2008) [Cited 9 times].

31.T. Nagami, H. Mizuta, N. Momo, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, and S. Oda, IEEE Transactions on Electron Deices, 54, 1132 (2007) [Cited 18 times].

32.S. Saito, D. Hisamoto, H. Shimizu, H. Hamamura, R. Tsuchiya, Y. Matsui, T. Mine, T. Arai, N. Sugii, K. Torii, S. Kimura, and T. Onai, "Silicon light-emitting transistor for on-chip optical interconnection",  Appl. Phys. Lett. 89, 163504 (2006) [cited 35 times].

33.S. Saito, D. Hisamoto, H. Shimizu, H. Hamamura, R. Tsuchiya, Y. Matsui, T. Mine, T. Arai, N. Sugii, K. Torii, S. Kimura, and T. Onai, " Electro-Luminescence from Ultra-Thin Silicon", Jpn. J. Appl. Phys. 45, pp. L679-L682 (2006) [cited 49 times].

34.S. Saito, Y. Shimamoto, K. Torii, Y. Manabe, M. Caymax, J. W. Maes, M. Hiratani, and S. Kimura, “Remote-Charge-Scattering Limited Mobility in Field-Effect Transistors with SiO2 and Al2O3/SiO2 Gate Stacks”, J. Appl. Phys. 98, 113706 (2005) [cited 51 times].

35.T. Arai, S. Saito, H. Fukuda, and T. Onai, “Synthesis, Monolayer Formation and Control of Electrical Characteristics of 3-nm Diameter Gold Nanoparticles”, Jpn. J. Appl. Phys. 44, pp. 5667-5669 (2005)[cited 7 times].

36.O. Tonomura, Y. Shimamoto, H. Miki, S. Saito, K. Torii, M. Hiratani, and J. Yugami, “Accurate Evaluation of Mobility in High Gate-Leakage-Current MOSFETs by Using a Transmission-Line Model”, IEEE, Transactions on Electron Devices, 51, pp. 1653-1658 (2004).

37.S. Saito, K. Torii, Y. Shimamoto, S. Tsujikawa, H. Hamamura, O. Tonomura, T. Mine, D. Hisamoto, T. Onai, J. Yugami, M. Hiratani, and S. Kimura, “Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics”, Appl. Phys. Lett. 84, 1395 (2004) [cited 34 times].

38.K. Torii, Y. Shimamoto, S. Saito, K. Obata, T. Yamauchi, D. Hisamoto, T. Onai and M. Hiratani, "Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al2O3 gate dielectrics", Microelectron. Eng. 65, pp. 447-453 (2003) [cited 21 times].

39.M. Hiratani, K. Torii, Y. Shimamotob, S. Saito, "Built-in interface in high-k gate stacks", Appl. Surf. Science 216, pp. 208-214 (2003) [cited 22 times].

40.M. Hiratani, S. Saito, Y. Shimamoto, K. Torii, "Effective Electron Mobility Reduced by Remote Charge Scattering in High-k Gate Stackes", Jpn. J. Appl. Phys., 41, pp. 4521-4522, (2002) [cited 60 times].

41.S. Saito, Y. Matsui, K. Torii, Y. Shimamoto, M. Hiratani, and S. Kimura, “Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics”, Jpn. J. Appl. Phys. 42, pp. L1425-L1428 (2003) [cited 12 times]

42.S. Saito, K. Torii, M. Hiratani, and T. Onai, "Improved theory for remote-charge-scattering-limited mobility in metal-oxide-semiconductor transistors", Appl. Phys. Lett., 81, pp. 2391-2393, (2002) [cited 46 times].

43.S. Saito, K. Torii, M. Hiratani, and T. Onai, "Analytical Quantum Mechanical Model for Accumulation Capacitance of MOS Structures", IEEE Electron Device Lett., 23, pp. 348-350, (2002) [cited 58 times].

44.S. Saito, H. Yoshimoto, Y. Y. Suzuki and S. Kurihara, “Is Evolution from Weak to Strong Coupling Superconductivity Always Continuous?”, J. Phys. Soc. Jpn. 70, pp. 1186-1189 (2001).

45.Y. Y. Suzuki, S. Saito, and S. Kurihara, ”Quanrum Phase Transition in infinite dimensional attractive Hubbard Model”, Busseikenkyu 71, 656-657 (1999).

46.S. Saito, H. Yoshimoto, S. Kurihara, and Y. Y. Suzuki, ”Quanrum Phase Transition in d=∞ Hubbard Model”, Busseikenkyu 71, pp. 840-841 (1999).

47.S. Saito, S. Kurihara, and Y. Y. Suzuki, “Quantum Transition to Supersolid Phase”, J. of Superconductivity 12, pp. 231-232 (1999).

48.Y. Y. Suzuki, S. Saito, and S. Kurihara, “Gutzwiller-type projected BCS ground states for attractive Hubbard model”, Prog. Theor. Phys. 102, p. 953 (1999) [cited 7 times].

49.Y. Y. Suzuki, S. Saito, and S. Kurihara, “Quantum Phase Transitions in the Infinite Dimensional Hubbard Model”, J. Low Temp. Phys. 113, pp. 897-902 (1998).

50.W. Kinase, R. Naganuma, S. Saito, S. Kuwata, K. Takahashi, “2D electron-ion system on crystal surface in polarization reversal, incommensurate state and surface phonon”, Surface Science 357-358, pp. 279-282 (1996).

51.W. Kinase, S. Kuwata, R. Naganuma, K. Harada, S. Saito, and A. Sekiguchi, “Charge transfer in a 2D electron-hole system in layered perovskite crystals”, Czech. J. of Phys. 46, pp. 949-950 (1996).

52.W. Kinase, K. Harada, R. Naganuma, S. Saito, and S. Kuwata, “Microdomain caused by 2D electron system and modulated structure in incommensurate phase”, Ferroelectric 191, pp. 261-266 (1996).

Prof. Shinichi Saito